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0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
Korea, Republic Of
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Noliktavas stāvoklis patreiz nav pieejams
€ 82,50
Katrs (tiek piegadats Tubina) (bez PVN)
€ 99,82
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
€ 82,50
Katrs (tiek piegadats Tubina) (bez PVN)
€ 99,82
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Penālis)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
Korea, Republic Of
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
