bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Noliktavas stāvoklis patreiz nav pieejams
€ 11,80
€ 5,90 Katrs (Paka ir 2) (bez PVN)
€ 14,28
€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 11,80
€ 5,90 Katrs (Paka ir 2) (bez PVN)
€ 14,28
€ 7,139 Katrs (Paka ir 2) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
2
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 2 - 18 | € 5,90 | € 11,80 |
| 20 - 98 | € 5,20 | € 10,40 |
| 100 - 198 | € 4,65 | € 9,30 |
| 200+ | € 4,00 | € 8,00 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.