bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
650V
Series
MDmesh M5
Package Type
TO-220FP
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.34Ω
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Height
16.4mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Noliktavas stāvoklis patreiz nav pieejams
€ 6,00
€ 1,20 Katrs (Paka ir 5) (bez PVN)
€ 7,26
€ 1,452 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 6,00
€ 1,20 Katrs (Paka ir 5) (bez PVN)
€ 7,26
€ 1,452 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
5
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 1,20 | € 6,00 |
| 10+ | € 1,15 | € 5,75 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
650V
Series
MDmesh M5
Package Type
TO-220FP
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.34Ω
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Height
16.4mm
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.