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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
25W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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Noliktavas stāvoklis patreiz nav pieejams
€ 4,85
€ 4,85 Katrs (bez PVN)
€ 5,87
€ 5,87 Katrs (Ieskaitot PVN)
Standarts
1
€ 4,85
€ 4,85 Katrs (bez PVN)
€ 5,87
€ 5,87 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 4,85 |
| 10 - 99 | € 2,60 |
| 100 - 499 | € 2,30 |
| 500+ | € 2,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
25W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Produkta Apraksts
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
