bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Noliktavas stāvoklis patreiz nav pieejams
€ 6 500,00
€ 2,60 Katrs (Rulli ir 2500) (bez PVN)
€ 7 865,00
€ 3,146 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 6 500,00
€ 2,60 Katrs (Rulli ir 2500) (bez PVN)
€ 7 865,00
€ 3,146 Katrs (Rulli ir 2500) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2500
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.