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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
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Noliktavas stāvoklis patreiz nav pieejams
€ 8,75
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 10,59
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 8,75
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 10,59
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
5
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 5 - 45 | € 1,75 | € 8,75 |
| 50 - 245 | € 1,45 | € 7,25 |
| 250 - 495 | € 1,10 | € 5,50 |
| 500+ | € 0,967 | € 4,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-252
Series
STD
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
