bez PVN
ar PVN
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0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
Produkta Apraksts
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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Noliktavas stāvoklis patreiz nav pieejams
€ 2 450,00
€ 0,98 Katrs (Rulli ir 2500) (bez PVN)
€ 2 964,50
€ 1,186 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 2 450,00
€ 0,98 Katrs (Rulli ir 2500) (bez PVN)
€ 2 964,50
€ 1,186 Katrs (Rulli ir 2500) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.17mm
Length
6.6mm
Automotive Standard
No
Produkta Apraksts
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
