bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Noliktavas stāvoklis patreiz nav pieejams
€ 11,00
€ 2,20 Katrs (tiek piegadats Rulli) (bez PVN)
€ 13,31
€ 2,662 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 11,00
€ 2,20 Katrs (tiek piegadats Rulli) (bez PVN)
€ 13,31
€ 2,662 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
5
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.