bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
75V
Series
STripFET II
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
75nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Noliktavas stāvoklis patreiz nav pieejams
€ 6,40
€ 3,20 Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,74
€ 3,872 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
2
€ 6,40
€ 3,20 Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,74
€ 3,872 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
2
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 2 - 18 | € 3,20 | € 6,40 |
| 20 - 98 | € 3,05 | € 6,10 |
| 100 - 198 | € 2,95 | € 5,90 |
| 200+ | € 2,60 | € 5,20 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
75V
Series
STripFET II
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
75nC
Maximum Gate Source Voltage Vgs
-15, +15V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Produkta Apraksts
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.