bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
95nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Noliktavas stāvoklis patreiz nav pieejams
€ 4 800,00
€ 4,80 Katrs (Rulli ir 1000) (bez PVN)
€ 5 808,00
€ 5,808 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 4 800,00
€ 4,80 Katrs (Rulli ir 1000) (bez PVN)
€ 5 808,00
€ 5,808 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
95nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Izcelsmes valsts
China
Produkta Apraksts
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.