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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Produkta Apraksts
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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Noliktavas stāvoklis patreiz nav pieejams
€ 4 550,00
€ 4,55 Katrs (Rulli ir 1000) (bez PVN)
€ 5 505,50
€ 5,506 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 4 550,00
€ 4,55 Katrs (Rulli ir 1000) (bez PVN)
€ 5 505,50
€ 5,506 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Produkta Apraksts
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
