bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Noliktavas stāvoklis patreiz nav pieejams
€ 9,50
€ 1,90 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,50
€ 2,299 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 9,50
€ 1,90 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,50
€ 2,299 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
5
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 5 - 45 | € 1,90 | € 9,50 |
| 50 - 245 | € 1,55 | € 7,75 |
| 250 - 495 | € 1,20 | € 6,00 |
| 500+ | € 1,05 | € 5,25 |
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Height
4.6mm
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.