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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1.2kV
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Power Dissipation Pd
389W
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
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Noliktavas stāvoklis patreiz nav pieejams
€ 29,70
€ 29,70 Katrs (bez PVN)
€ 35,94
€ 35,94 Katrs (Ieskaitot PVN)
Standarts
1
€ 29,70
€ 29,70 Katrs (bez PVN)
€ 35,94
€ 35,94 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
Ideate. Create. Collaborate
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1.2kV
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Power Dissipation Pd
389W
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
