bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Noliktavas stāvoklis patreiz nav pieejams
€ 49 500,00
€ 16,50 Katrs (Rulli ir 3000) (bez PVN)
€ 59 895,00
€ 19,965 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 49 500,00
€ 16,50 Katrs (Rulli ir 3000) (bez PVN)
€ 59 895,00
€ 19,965 Katrs (Rulli ir 3000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
3000
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.