bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Noliktavas stāvoklis patreiz nav pieejams
€ 62,00
€ 62,00 Katrs (bez PVN)
€ 75,02
€ 75,02 Katrs (Ieskaitot PVN)
Standarts
1
€ 62,00
€ 62,00 Katrs (bez PVN)
€ 75,02
€ 75,02 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
| Daudzums | Vienības cena |
|---|---|
| 1 - 49 | € 62,00 |
| 50 - 99 | € 54,50 |
| 100 - 249 | € 49,20 |
| 250 - 499 | € 47,90 |
| 500+ | € 46,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Izcelsmes valsts
China
Produkta Apraksts
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
