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Detaļu saraksts
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkta Apraksts
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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Noliktavas stāvoklis patreiz nav pieejams
€ 45,20
€ 45,20 Katrs (bez PVN)
€ 54,69
€ 54,69 Katrs (Ieskaitot PVN)
Standarts
1
€ 45,20
€ 45,20 Katrs (bez PVN)
€ 54,69
€ 54,69 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
| Daudzums | Vienības cena |
|---|---|
| 1 - 49 | € 45,20 |
| 50 - 99 | € 36,90 |
| 100 - 249 | € 35,90 |
| 250 - 499 | € 35,00 |
| 500+ | € 34,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkta Apraksts
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
