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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkta Apraksts
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
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Noliktavas stāvoklis patreiz nav pieejams
€ 19 600,00
€ 19,60 Katrs (Rulli ir 1000) (bez PVN)
€ 23 716,00
€ 23,716 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 19 600,00
€ 19,60 Katrs (Rulli ir 1000) (bez PVN)
€ 23 716,00
€ 23,716 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Series
SCT
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Produkta Apraksts
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
