bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Noliktavas stāvoklis patreiz nav pieejams
€ 1 125,00
€ 37,50 Katrs (Tubina ir 30) (bez PVN)
€ 1 361,25
€ 45,375 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 1 125,00
€ 37,50 Katrs (Tubina ir 30) (bez PVN)
€ 1 361,25
€ 45,375 Katrs (Tubina ir 30) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
30
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
65A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.59Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
122nC
Maximum Power Dissipation Pd
318W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.