STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Brand

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

45nC

Maximum Gate Source Voltage Vgs

25V

Maximum Operating Temperature

175°C

Height

10.4mm

Length

15.8mm

Standards/Approvals

No

Width

4.7mm

Automotive Standard

No