bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Noliktavas stāvoklis patreiz nav pieejams
€ 480,00
€ 480,00 1 tubina no 30 (bez PVN)
€ 580,80
€ 580,80 1 tubina no 30 (Ieskaitot PVN)
1
€ 480,00
€ 480,00 1 tubina no 30 (bez PVN)
€ 580,80
€ 580,80 1 tubina no 30 (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.