bez PVN
ar PVN
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Noliktavas stāvoklis patreiz nav pieejams
€ 297,00
€ 297,00 1 tubina no 30 (bez PVN)
€ 359,37
€ 359,37 1 tubina no 30 (Ieskaitot PVN)
1
€ 297,00
€ 297,00 1 tubina no 30 (bez PVN)
€ 359,37
€ 359,37 1 tubina no 30 (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Produkta Apraksts
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.