STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Brand

Channel Type

N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

STPOWER Gen3 SiC MOSFET

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

389W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22V

Maximum Operating Temperature

200°C

Length

35.9mm

Height

5.15mm

Standards/Approvals

No

Width

15.9mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

China