bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
Type P, Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Length
9mm
Height
1mm
Automotive Standard
No
Izcelsmes valsts
Thailand
Produkta Apraksts
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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Noliktavas stāvoklis patreiz nav pieejams
€ 6,60
€ 6,60 Katrs (bez PVN)
€ 7,99
€ 7,99 Katrs (Ieskaitot PVN)
Standarts
1
€ 6,60
€ 6,60 Katrs (bez PVN)
€ 7,99
€ 7,99 Katrs (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
Type P, Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Length
9mm
Height
1mm
Automotive Standard
No
Izcelsmes valsts
Thailand
Produkta Apraksts
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
