bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
2nC
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Izcelsmes valsts
Thailand
Produkta Apraksts
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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Noliktavas stāvoklis patreiz nav pieejams
€ 16 800,00
€ 5,60 Katrs (Rulli ir 3000) (bez PVN)
€ 20 328,00
€ 6,776 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 16 800,00
€ 5,60 Katrs (Rulli ir 3000) (bez PVN)
€ 20 328,00
€ 6,776 Katrs (Rulli ir 3000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
2nC
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
Izcelsmes valsts
Thailand
Produkta Apraksts
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
