STMicroelectronics IRF630 N-channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220

RS noliktavas nr.: 486-0171PRažotājs: STMicroelectronicsRažotāja kods: IRF630
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 19,35

€ 0,774 Katrs (tiek piegadats Tubina) (bez PVN)

€ 23,41

€ 0,937 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

STMicroelectronics IRF630 N-channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220
Izvēlēties iepakojuma veidu

€ 19,35

€ 0,774 Katrs (tiek piegadats Tubina) (bez PVN)

€ 23,41

€ 0,937 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

STMicroelectronics IRF630 N-channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cenaPer Penālis
25 - 95€ 0,774€ 3,87
100 - 245€ 0,592€ 2,96
250 - 495€ 0,558€ 2,79
500+€ 0,523€ 2,62

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt