bez PVN
ar PVN
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Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Produkta Apraksts
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
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Noliktavas stāvoklis patreiz nav pieejams
€ 60,00
€ 1,20 Katrs (Tubina ir 50) (bez PVN)
€ 72,60
€ 1,452 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 60,00
€ 1,20 Katrs (Tubina ir 50) (bez PVN)
€ 72,60
€ 1,452 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Produkta Apraksts
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
