bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Noliktavas stāvoklis patreiz nav pieejams
€ 456,00
€ 0,152 Katrs (Rulli ir 3000) (bez PVN)
€ 551,76
€ 0,184 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 456,00
€ 0,152 Katrs (Rulli ir 3000) (bez PVN)
€ 551,76
€ 0,184 Katrs (Rulli ir 3000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
3000
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 3000 - 3000 | € 0,152 | € 456,00 |
| 6000 - 6000 | € 0,138 | € 414,00 |
| 9000 - 21000 | € 0,121 | € 363,00 |
| 24000+ | € 0,117 | € 351,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
