bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Produkta Apraksts
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Noliktavas stāvoklis patreiz nav pieejams
€ 13,95
€ 0,558 Katrs (Paka ir 25) (bez PVN)
€ 16,88
€ 0,675 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 13,95
€ 0,558 Katrs (Paka ir 25) (bez PVN)
€ 16,88
€ 0,675 Katrs (Paka ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 25 - 225 | € 0,558 | € 13,95 |
| 250 - 600 | € 0,501 | € 12,52 |
| 625+ | € 0,411 | € 10,28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Produkta Apraksts
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
