bez PVN
ar PVN
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Detaļu saraksts
Pieteikties/Reģistrēties
0.00(bez PVN)
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Noliktavas stāvoklis patreiz nav pieejams
€ 500,00
€ 0,20 Katrs (Rulli ir 2500) (bez PVN)
€ 605,00
€ 0,242 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 500,00
€ 0,20 Katrs (Rulli ir 2500) (bez PVN)
€ 605,00
€ 0,242 Katrs (Rulli ir 2500) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2500
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 2500 - 2500 | € 0,20 | € 500,00 |
| 5000 - 7500 | € 0,165 | € 412,50 |
| 10000 - 22500 | € 0,156 | € 390,00 |
| 25000+ | € 0,151 | € 377,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Tehniskie Dokumenti
Specifikācija
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Automotive Standard
No
Produkta Apraksts
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
