Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
762 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
220 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1.8 nC @ 8 V
Width
0.95mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,187
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,226
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
50
€ 0,187
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,226
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
50 - 450 | € 0,187 | € 9,35 |
500+ | € 0,077 | € 3,85 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
762 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
220 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
1.8 nC @ 8 V
Width
0.95mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts