Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 65,00
€ 1,30 Katrs (Paka ir 50) (bez PVN)
€ 78,65
€ 1,573 Katrs (Paka ir 50) (Ieskaitot PVN)
50
€ 65,00
€ 1,30 Katrs (Paka ir 50) (bez PVN)
€ 78,65
€ 1,573 Katrs (Paka ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
50 - 50 | € 1,30 | € 65,00 |
100 - 200 | € 1,00 | € 50,00 |
250 - 450 | € 0,942 | € 47,10 |
500+ | € 0,879 | € 43,95 |
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.52mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Height
15.85mm
Izcelsmes valsts
China