Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,80
Katrs (bez PVN)
€ 5,81
Katrs (Ieskaitot PVN)
1
€ 4,80
Katrs (bez PVN)
€ 5,81
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 4,80 |
10 - 19 | € 3,55 |
20+ | € 3,40 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Izcelsmes valsts
Japan
Produkta apraksts