N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 7,25
€ 1,45 Katrs (Paka ir 5) (bez PVN)
€ 8,77
€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 7,25
€ 1,45 Katrs (Paka ir 5) (bez PVN)
€ 8,77
€ 1,754 Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 1,45 | € 7,25 |
| 25 - 45 | € 1,30 | € 6,50 |
| 50 - 245 | € 1,25 | € 6,25 |
| 250 - 495 | € 1,20 | € 6,00 |
| 500+ | € 1,15 | € 5,75 |
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products