Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT

RS noliktavas nr.: 168-4928Ražotājs: Texas InstrumentsRažotāja kods: BQ500101DPCT
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Width

3.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.6mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.24V

Height

1mm

Izcelsmes valsts

Philippines

Produkta apraksts

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,281

Katrs (Rulli ir 250) (bez PVN)

€ 0,34

Katrs (Rulli ir 250) (Ieskaitot PVN)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT

€ 0,281

Katrs (Rulli ir 250) (bez PVN)

€ 0,34

Katrs (Rulli ir 250) (Ieskaitot PVN)

Dual P-Channel MOSFET, 10 A, 30 V, 8-Pin VSON-CLIP Texas Instruments BQ500101DPCT
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

8 W

Transistor Configuration

Dual Base

Width

3.6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+125 °C

Length

4.6mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.24V

Height

1mm

Izcelsmes valsts

Philippines

Produkta apraksts

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more