N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STMicroelectronics STL8N10LF3
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3 000,00
€ 1,00 Katrs (Rulli ir 3000) (bez PVN)
€ 3 630,00
€ 1,21 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 3 000,00
€ 1,00 Katrs (Rulli ir 3000) (bez PVN)
€ 3 630,00
€ 1,21 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products