Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Automotive Standard
AEC-Q101
Channel Type
N
Number of Elements per Chip
2
Transistor Configuration
Dual
Minimum Operating Temperature
-55 °C
Pin Count
8
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
80 V
Maximum Gate Source Voltage
±20 V
Height
1.05mm
Maximum Power Dissipation
3.1 W
Width
5.1mm
Length
6.1mm
Maximum Continuous Drain Current
74 A
Package Type
DFN
Maximum Drain Source Resistance
8.8 mΩ
Batteries
3 x AAA BatteryTypical Gate Charge @ Vgs
32 nC @ 10 V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,45
Katrs (Rulli ir 1500) (bez PVN)
€ 1,754
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 1,45
Katrs (Rulli ir 1500) (bez PVN)
€ 1,754
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Automotive Standard
AEC-Q101
Channel Type
N
Number of Elements per Chip
2
Transistor Configuration
Dual
Minimum Operating Temperature
-55 °C
Pin Count
8
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
1.2V
Maximum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
80 V
Maximum Gate Source Voltage
±20 V
Height
1.05mm
Maximum Power Dissipation
3.1 W
Width
5.1mm
Length
6.1mm
Maximum Continuous Drain Current
74 A
Package Type
DFN
Maximum Drain Source Resistance
8.8 mΩ
Batteries
3 x AAA BatteryTypical Gate Charge @ Vgs
32 nC @ 10 V