Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,056
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,068
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 0,056
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,068
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Width
1.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts