Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,095
Katrs (Rulli ir 3000) (bez PVN)
€ 0,115
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,095
Katrs (Rulli ir 3000) (bez PVN)
€ 0,115
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,095 | € 285,00 |
6000 - 12000 | € 0,09 | € 270,00 |
15000 - 27000 | € 0,072 | € 216,00 |
30000 - 57000 | € 0,068 | € 204,00 |
60000+ | € 0,064 | € 192,00 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts