Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1 nC @ 8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
Malaysia
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,199
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,241
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 0,199
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,241
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 50 | € 0,199 | € 9,95 |
100 - 200 | € 0,174 | € 8,70 |
250 - 450 | € 0,142 | € 7,10 |
500 - 950 | € 0,137 | € 6,85 |
1000+ | € 0,131 | € 6,55 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
1 nC @ 8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Izcelsmes valsts
Malaysia