P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Transistor Material
Si
Typical Gate Charge @ Vgs
115 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Minimum Operating Temperature
-55 °C
Height
4.57mm
Produkta apraksts
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,05
€ 4,05 Katrs (bez PVN)
€ 4,90
€ 4,90 Katrs (Ieskaitot PVN)
Standarts
1
€ 4,05
€ 4,05 Katrs (bez PVN)
€ 4,90
€ 4,90 Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 4,05 |
| 10 - 24 | € 3,70 |
| 25 - 49 | € 3,50 |
| 50 - 99 | € 3,25 |
| 100+ | € 3,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
340 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Transistor Material
Si
Typical Gate Charge @ Vgs
115 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Minimum Operating Temperature
-55 °C
Height
4.57mm
Produkta apraksts
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products