N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Length
10.31mm
Width
9.45mm
Maximum Operating Temperature
+150 °C
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
4.57mm
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,50
Katrs (bez PVN)
€ 6,66
Katrs (Ieskaitot PVN)
Standarts
1
€ 5,50
Katrs (bez PVN)
€ 6,66
Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 5,50 |
| 10 - 49 | € 4,65 |
| 50 - 249 | € 4,45 |
| 250 - 499 | € 3,80 |
| 500+ | € 3,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
800 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Length
10.31mm
Width
9.45mm
Maximum Operating Temperature
+150 °C
Series
CoolMOS C3
Minimum Operating Temperature
-55 °C
Height
4.57mm
Produkta apraksts
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products