Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1 060,00
€ 0,265 Katrs (Rulli ir 4000) (bez PVN)
€ 1 282,60
€ 0,321 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 1 060,00
€ 0,265 Katrs (Rulli ir 4000) (bez PVN)
€ 1 282,60
€ 0,321 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
40 nC @ 10 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V