N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,485
Katrs (Rulli ir 2500) (bez PVN)
€ 0,587
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,485
Katrs (Rulli ir 2500) (bez PVN)
€ 0,587
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products