P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2

RS noliktavas nr.: 892-2217PRažotājs: InfineonRažotāja kods: BSS84PH6327XTSA2
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.24V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0,033

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,04

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 250.

Ražošana -

Pieejams komplektos pa 250.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

250

Pieejams komplektos pa 250
250€ 8,25
500€ 16,50
750€ 24,75
1000€ 33,00
1250€ 41,25
1500€ 49,50
1750€ 57,75
2000€ 66,00
2250€ 74,25
2500€ 82,50
2750€ 90,75
3000€ 99,00
3250€ 107,25
3500€ 115,50
3750€ 123,75

€ 0,033

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,04

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 170 mA, 60 V, 3-Pin SOT-23 Infineon BSS84PH6327XTSA2
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 250.

Ražošana -

Pieejams komplektos pa 250.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

250

Pieejams komplektos pa 250
250€ 8,25
500€ 16,50
750€ 24,75
1000€ 33,00
1250€ 41,25
1500€ 49,50
1750€ 57,75
2000€ 66,00
2250€ 74,25
2500€ 82,50
2750€ 90,75
3000€ 99,00
3250€ 107,25
3500€ 115,50
3750€ 123,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.24V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more