Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Produkta apraksts
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,669
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,809
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
50
€ 0,669
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,809
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Industriālais iepakojums (Lente)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
50 - 95 | € 0,669 | € 3,34 |
100 - 495 | € 0,518 | € 2,59 |
500 - 995 | € 0,455 | € 2,28 |
1000+ | € 0,413 | € 2,06 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
100 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.77mm
Width
2.41mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.01mm
Produkta apraksts