Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
3.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
4.95mm
Typical Gate Charge @ Vgs
19.1 @ 10 V nC
Height
1.5mm
Series
DMN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Automotive Standard
AEC-Q101
Produkta apraksts
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,127
Katrs (Rulli ir 2500) (bez PVN)
€ 0,154
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,127
Katrs (Rulli ir 2500) (bez PVN)
€ 0,154
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
±20 V
Width
3.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
4.95mm
Typical Gate Charge @ Vgs
19.1 @ 10 V nC
Height
1.5mm
Series
DMN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Automotive Standard
AEC-Q101
Produkta apraksts