Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,281
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,34
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
€ 0,281
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,34
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 400 | € 0,281 | € 28,10 |
500 - 900 | € 0,173 | € 17,30 |
1000 - 2400 | € 0,168 | € 16,80 |
2500 - 4900 | € 0,158 | € 15,80 |
5000+ | € 0,149 | € 14,90 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts