SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Maximum Operating Temperature
+175 °C
Transistor Material
SiC
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Width
53mm
Number of Elements per Chip
1
Minimum Operating Temperature
-40 °C
Height
15.75mm
Izcelsmes valsts
United States
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1 150,00
Katrs (bez PVN)
€ 1 391,50
Katrs (Ieskaitot PVN)
1
€ 1 150,00
Katrs (bez PVN)
€ 1 391,50
Katrs (Ieskaitot PVN)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Maximum Operating Temperature
+175 °C
Transistor Material
SiC
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Width
53mm
Number of Elements per Chip
1
Minimum Operating Temperature
-40 °C
Height
15.75mm
Izcelsmes valsts
United States
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products