N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3

RS noliktavas nr.: 200-6792Ražotājs: VishayRažotāja kods: SQD10950E_GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

250 V

Series

AEC-Q101, Automotive, TrenchFET®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω, 0.162 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 344,00

€ 0,672 Katrs (Rulli ir 2000) (bez PVN)

€ 1 626,24

€ 0,813 Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3

€ 1 344,00

€ 0,672 Katrs (Rulli ir 2000) (bez PVN)

€ 1 626,24

€ 0,813 Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

250 V

Series

AEC-Q101, Automotive, TrenchFET®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω, 0.162 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more