N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 6,75
€ 1,35 Katrs (tiek piegadats Lente) (bez PVN)
€ 8,17
€ 1,634 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
5
€ 6,75
€ 1,35 Katrs (tiek piegadats Lente) (bez PVN)
€ 8,17
€ 1,634 Katrs (tiek piegadats Lente) (Ieskaitot PVN)
Standarts
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Lente |
|---|---|---|
| 5 - 45 | € 1,35 | € 6,75 |
| 50 - 245 | € 1,20 | € 6,00 |
| 250 - 495 | € 1,15 | € 5,75 |
| 500 - 1245 | € 0,875 | € 4,38 |
| 1250+ | € 0,782 | € 3,91 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Produkta apraksts
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products